Physical Models of Semiconductor Quantum Devices

封面
Springer Science & Business Media, 1999 - 263 頁
Solid state electronics is undergoing rapid changes driven by heteroepitaxy, lithography, and new device concepts. In particular there has been a flurry of activity in compound semiconductors as a result of the advent of semiconductor laser and integrated optoelectronic circuits. Physical Models of Semiconductor Quantum Devices addresses three main areas of solid state electronics: electronic and optical properties of low dimensional semiconductor materials; the principal physics of quantum electronic devices; and the principal physics of quantum optical devices. The link between the basic physics on which the real devices are based and the output from these devices is closely observed. The result is a detailed overview of the new material properties on which novel solid state electronic devices such as quantum diodes, small size transistors, and high electron mobility transistors are based. It provides an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors.
 

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第 231 頁 - J. Faist, F. Capasso, C. Sirtori, DL Sivco, AL Hutchinson, and AY Cho, "Vertical transition quantum cascade laser with Bragg confined excited state,

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