Physical Models of Semiconductor Quantum DevicesSpringer Science & Business Media, 1999 - 263 頁 Solid state electronics is undergoing rapid changes driven by heteroepitaxy, lithography, and new device concepts. In particular there has been a flurry of activity in compound semiconductors as a result of the advent of semiconductor laser and integrated optoelectronic circuits. Physical Models of Semiconductor Quantum Devices addresses three main areas of solid state electronics: electronic and optical properties of low dimensional semiconductor materials; the principal physics of quantum electronic devices; and the principal physics of quantum optical devices. The link between the basic physics on which the real devices are based and the output from these devices is closely observed. The result is a detailed overview of the new material properties on which novel solid state electronic devices such as quantum diodes, small size transistors, and high electron mobility transistors are based. It provides an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors. |
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V | 14 |
VI | 17 |
VIII | 19 |
IX | 22 |
XLI | 103 |
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XXX | 69 |
XXXI | 70 |
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XXXIV | 82 |
XXXV | 83 |
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XXXVIII | 93 |
XXXIX | 97 |
XL | 99 |
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L | 135 |
LI | 136 |
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常見字詞
2DEG absorption coefficient AlGaAs AlGaAs/GaAs alloy amplitude Appl approximation atoms band edge bandgap barrier height barrier thickness Bloch calculated conduction band conduction bandedge conduction channel constant crystal current density detector diffraction dimensional diode doping concentration E₁ effective mass electric field electron and hole Electron Devices emission emitter energy band structure envelope function exciton external bias Fermi level Figure frequency Fu and Willander GaAs gate bias GOTO ħ² Hamiltonian HEMT heterostructure IEEE impurity scattering infrared ionized impurity ionized impurity scattering kinetic energy laser lattice layer Lett material matrix element mobility n-type obtain perturbation phonon Phys Poisson equation quantum dot QWIP radiation recombination region resonant tunneling sample growth direction Schrödinger equation semiconductor sheet density silicon subband substrate superlattice temperature transistor transport valence band varactor velocity wave vector wavefunction wavelength Willander xy plane xy-plane z-axis z-direction
熱門章節
第 231 頁 - J. Faist, F. Capasso, C. Sirtori, DL Sivco, AL Hutchinson, and AY Cho, "Vertical transition quantum cascade laser with Bragg confined excited state,