Microsystem DesignSpringer Science & Business Media, 2005年12月20日 - 689 頁 It is a real pleasure to write the Foreword for this book, both because I have known and respected its author for many years and because I expect this book’s publication will mark an important milestone in the continuing worldwide development of microsystems. By bringing together all aspects of microsystem design, it can be expected to facilitate the training of not only a new generation of engineers, but perhaps a whole new type of engineer – one capable of addressing the complex range of problems involved in reducing entire systems to the micro- and nano-domains. This book breaks down disciplinary barriers to set the stage for systems we do not even dream of today. Microsystems have a long history, dating back to the earliest days of mic- electronics. While integrated circuits developed in the early 1960s, a number of laboratories worked to use the same technology base to form integrated sensors. The idea was to reduce cost and perhaps put the sensors and circuits together on the same chip. By the late-60s, integrated MOS-photodiode arrays had been developed for visible imaging, and silicon etching was being used to create thin diaphragms that could convert pressure into an electrical signal. By 1970, selective anisotropic etching was being used for diaphragm formation, retaining a thick silicon rim to absorb package-induced stresses. Impurity- and electrochemically-based etch-stops soon emerged, and "bulk micromachining" came into its own. |
內容
MICROFABRICATION | |
PROCESS INTEGRATION | |
LUMPED MODELING | |
Circuit Connections in the Convention | |
ENERGYCONSERVING TRANSDUCERS | |
DYNAMICS | |
16 | |
17 | |
19 | |
21 | |
Electrode Structures | |
22 | |
24 | |
Appendices | |
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accelerometer actuator amplifier applied assume axial beam behavior bending boundary conditions capacitance capacitor Chapter charge co-energy coefficient create damping Debye length deflection density depends diaphragm differential diffusion diode displacement dissipative doping effect eigenfunctions electric field electronic electrostatic element energy domain equation equilibrium equivalent circuit etch example factor feedback filament film flow fluid force gradient illustrates input integral Joule heating Laplace transform layer length linear load lumped-element magnetic material mechanical MEMS devices modulus MOSFET n-type nitride noise nonlinear op-amp output oxide package piezoelectric piezoresistor plate Poisson Poisson ratio poles polysilicon position potential pressure pull-in ratio region resistance resistor resonant frequency response result sensor shear shear stress shown in Fig signal silicon silicon dioxide SIMULINK sinusoidal spring constant stored energy strain stress structure substrate surface temperature term thermal thickness transducer transfer function transistor trial solution variables variation velocity voltage wafer zero