Physics of Semiconductor Devices

amp/cm² applied voltage approximately avalanche breakdown avalanche region band gap barrier height breakdown voltage capacitance carrier concentration Chapter charge cm³ coefficient collector condition conduction band constant current density current-voltage characteristics curve decreases depletion layer depletion region diffusion distribution doping drain drift effect electric field emission emitter Energy band diagram epitaxial equation equilibrium Fermi level field-effect Figure frequency GaAs gate Germanium given IEEE IGFET IMPATT diode impurity concentration increases insulator interface inversion ionization laser lattice linearly graded junctions maximum metal metal-semiconductor microwave minority carrier MIS diode mobility n-type n-type semiconductor N₁ negative resistance noise obtained optical oxide p-i-n diode p-n junction parameters phonon photodiode Phys potential Proc recombination S. M. Sze saturation Shockley shown in Fig silicon Solid State Electron space-charge structure substrate surface temperature thermal thickness transistor transit tunnel diode V/cm valence band velocity versus VOLTS