Optoelectronic Devices: III-nitrides, 第 3 卷

封面
Elsevier, 2004 - 575 頁

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications.

The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage.

This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.



  • Broad review of optoelectronic applications of III-V nitrides
 

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內容

Preface
1
References
8
References
18
References
67
Acknowledgements
93
References
94
References
129
Acknowledgements
177
Acknowledgements
280
Acknowledgements
320
CHAPTER 4
322
TECHNOLOGY OF MOVPE PRODUCTION TOOLS
341
CHAPTER 13
351
References
385
Acknowledgements
429
Acknowledgements
450

CHAPTER 8
185
References
206
CHAPTER 9
213
Acknowledgements
246
CHAPTER 16
455
Acknowledgements
476
Acknowledgements
549
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Optoelectronic Devices: III Nitrides
Mohamed Henini,M Razeghi
有限的預覽 - 2004

常見字詞

acceptor active layer AIN epilayers Akasaki AlGaN AlGaN alloys Appl bandgap energy buffer layer calculated carrier cm³ concentration conduction conduction band Cryst crystal density devices diode direct bandgap dislocations donor doping effective electron epitaxial exciton fabricated ferromagnetism films frequency FWHM Ga₁-N GaAIN/GaN GaAs GaN QDs GaN substrate grown growth temperature HEMT heterostructure hole HVPE III-nitride impurity increase InGaN InGaN QDs ionization Kung laser lattice Lett material measured Mg-doped MOCVD MOVPE nitride obtained ohmic contacts optical output power p-type parameters peak phase phonon photodetectors photodiodes Phys PL emission PL intensity PL spectra polarization properties quantum efficiency quaternary quaternary InAlGaN Razeghi reactor recombination region resistance room temperature samples sapphire substrate Schottky semiconductors shown in Figure shows Si-doped solar-blind surface thermal thickness transition UV LEDs valence band voltage wafer wavelength wurtzite

關於作者 (2004)

Dr M. Henini has over 20 years' experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

書目資訊

書名Optoelectronic Devices: III-nitrides, 第 3 卷
作者M Razeghi, Mohamed Henini
編者M Razeghi, Mohamed Henini
版本圖解
出版者Elsevier, 2004
ISBN0080444261, 9780080444260
頁數575 頁
  
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