Best of Soviet Semiconductor Physics and Technology: 1987 - 1988

2D-electron absorption acceptor autosoliton band band gap calculated centers channel characteristic coefficient concentration conduction band conductivity corresponding crystals current-voltage characteristic curves cyclotron density determined diode distribution function donors effect Eksp electric field emission emitter energy epitaxy excitation exciton experimental Fermi film fluctuations frequency GaAs gallium arsenide heterojunction heterostructures impurity increase Institute of Physics intervalley investigated ionization JETP Lett Landau levels laser layer Leningrad luminescence magnetic field maximum measured method n-type nonequilibrium observed obtained optical oscillations p-n junctions parameters phonons photoconductivity photoexcitation photoluminescence photoresistors Phys Pis'ma Zh plasma polarization Poluprovodn potential pulses quantum radiation range recombination region relaxation Reprinted from Soviet resonance sample screening selectively doped Semicond semiconductor silicon spectra spectrum spin streamer structures substrate Tekh temperature dependence Teor thermal thickness thyristor tion transistor transitions trons valence band values voltage wavelength width