Frontiers In Electronics: Future Chips, Proceedings Of The 2002 Workshop On Frontiers In Electronics (Wofe-02)Yoon Soo Park, Michael S Shur, William Tang World Scientific, 2003年1月29日 - 400 頁 The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues. |
內容
| 1 | |
Ultra Large Scale Electronics ULSI | 61 |
Nanoelectronics | 147 |
Electrotextiles | 159 |
Wide Band Gap Materials and Devices | 195 |
Terahertz Electronics and Applications | 263 |
Advanced Concepts | 295 |
Sensing Applications | 325 |
Modeling and Simulation | 345 |
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AlGaN AlInGaN Appl applications bias voltage buffer layer capacitance capacitors carrier cell channel characteristics charge inversion chip circuit CMOS correlations density dependence depletion deposited detection detector devices doping electric field electron mobility Electronics and Systems electrotextiles emission energy fabricated field effect transistor Figure film fluctuations frequency function Gaska gate dielectric gate length gate voltage heterostructures HFETs high-k IEDM Tech IEEE increase integrated interface ions ITRS laser leakage current Lett lidar logic M. S. Shur macroion materials measured metal mobility MOSFET noise operation optical oxide parameters performance phonon Phys PIN diodes plasma plasmon polyelectrolyte pulse QDSL quantum radiation resistance resonant RF MEMS RSFQ scaling Schottky diode semiconductor shown SiGe signal silicon simulation spectral strain structure substrate surface switching technique temperature terahertz terahertz radiation thermal thickness threshold voltage wavelength Z-ions