A" is the Richardson's constant for (Ga. Mn)N, T is the absolute measurement temperature and k is Boltzmann's constant. This can also be written in the form COVERT -il/2 where NC is the effective density of states in the conduction band... Physics of Semiconductor Devices - 第 17 頁Simon M. Sze, Kwok K. Ng 著 - 2006 - 832 頁有限的預覽 - 關於此書
| K.L. Chopra, S.R. Das - 1983 - 607 頁
...constant, T is the absolute temperature, and Ef the Fermi energy. Thus, n is evaluated to be (2.6) **where Nc is the effective density of states in the conduction band,** expressed by the relation Nc , 2 r-'jT"l Mc (2.7) and F|,2(rj,) is the Fermi-Dirac integral'"" with... | |
| Mikhail Levinshtein, Michael Shur - 1991 - 370 頁
...with time, but is independent of z. The coefficients ß and ч are related by ß/ч = Ne exp (—SJT), **where Nc is the effective density of states in the conduction band.** The boundary conditions for Eqs. (2)- (4) are of the form »E (5) where d is the thickness of the semiconductor.... | |
| G. Martinez - 1992 - 324 頁
...(ccw«l). Under these conditions, the variation of conductivity is given by : Aa aar)Q0 00 rj o -Ed RTNce **kT where Nc is the effective density of states in the conduction band and** aa and Ej are given in section II1.B. In addition to traditional sources of noise, such a detector... | |
| Andreas Mandelis, Constantinos Christofides - 1993 - 352 頁
...current flow when these effects are neglected; VR is the carrier thermal velocity VR = A*T2/qNc (3.13) **where Nc is the effective density of states in the conduction band;** VD is an effective diffusion velocity, such that if VD « VR the diffusion process across the barrier... | |
| Ying Fu, M. Willander - 1999 - 263 頁
...Fermi-Dirac integral The concentration of free carriers in the conduction band can be calculated by IN (6.1) **where Nc is the effective density of states in the conduction band,** m* is the density-of-state effective mass, x = E/kBT is the carrier energy in unit of kBT, rj = Ej/kBT... | |
| Garg & Prakash, H. P. Garg - 2000 - 434 頁
...conduction band per unit volume of n-type crystal is given as: n = Nc exp [(EF - E()IKT\ Where NC is called **the effective density of states in the conduction band and is given** as: (17.2) h Here wi , is the effective mass of the electrons in the conduction band and n = — —... | |
| Gunnar Borstel, Andris Krumins, Donats Millers - 2000 - 492 頁
...density at trapping levels[9] is _ _ n0 + Ncexp(-u/kT)' Here n0 is the density of conduction electrons, **Nc is the effective density of states in the conduction band, and** u is the activation energy from the trapping levels to the conduction band. The relaxation time rm... | |
| James R. Janesick - 2001 - 906 頁
...constant, which describes the rate at which electrons are emitted from the traps. This constant is i **where NC is the effective density of states in the conduction band** (2.8 x 1019 states/cm3) and Ej is the trap energy level below the conduction band edge (eV). Here v,h... | |
| Wim Magnus, Wim Schoenmaker - 2002 - 270 頁
...approximation: n«,(r) = Nc-2=Fi/2 (0(eV(r,z) + EF - Ec)) (13.41) where the Fermi integral is \ftdt r = Jo Here **Nc is the effective density of states in the conduction band and** EF is the Fermi level of the system in the state of equilibrium. 13.6 Numerical Results During the... | |
| Yoon-Soo Park, Michael Shur, William Tang - 2002 - 345 頁
...is given by (10) where A is the anode area. The saturation current, denoted by Isa, is given by (11) **where Nc is the effective density of states in the conduction band and** me is the effective mass of the material, 7 is the temperature, k is the Boltzmann constant, and <!>B... | |
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