A" is the Richardson's constant for (Ga. Mn)N, T is the absolute measurement temperature and k is Boltzmann's constant. This can also be written in the form COVERT -il/2 where NC is the effective density of states in the conduction band... Physics of Semiconductor Devices - 第 17 頁Simon M. Sze, Kwok K. Ng 著 - 2006 - 832 頁有限的預覽 - 關於此書
| K.L. Chopra, S.R. Das - 1983 - 630 頁
...constant, T is the absolute temperature, and Ef the Fermi energy. Thus, n is evaluated to be (2.6) where Nc is the effective density of states in the conduction band, expressed by the relation Nc , 2 r-'jT"l Mc (2.7) and F|,2(rj,) is the Fermi-Dirac integral'"" with... | |
| Mikhail Levinshtein, Michael Shur - 1991 - 392 頁
...with time, but is independent of z. The coefficients ß and ч are related by ß/ч = Ne exp (—SJT), where Nc is the effective density of states in the conduction band. The boundary conditions for Eqs. (2)- (4) are of the form »E (5) where d is the thickness of the semiconductor.... | |
| G. Martinez - 1992 - 330 頁
...(ccw«l). Under these conditions, the variation of conductivity is given by : Aa aar)Q0 00 rj o -Ed RTNce kT where Nc is the effective density of states in the conduction band and aa and Ej are given in section II1.B. In addition to traditional sources of noise, such a detector... | |
| Andreas Mandelis, Constantinos Christofides - 1993 - 354 頁
...current flow when these effects are neglected; VR is the carrier thermal velocity VR = A*T2/qNc (3.13) where Nc is the effective density of states in the conduction band; VD is an effective diffusion velocity, such that if VD « VR the diffusion process across the barrier... | |
| Ying Fu, M. Willander - 1999 - 276 頁
...Fermi-Dirac integral The concentration of free carriers in the conduction band can be calculated by IN (6.1) where Nc is the effective density of states in the conduction band, m* is the density-of-state effective mass, x = E/kBT is the carrier energy in unit of kBT, rj = Ej/kBT... | |
| Gunnar Borstel, Andris Krumins, Donats Millers - 2000 - 518 頁
...density at trapping levels[9] is _ _ n0 + Ncexp(-u/kT)' Here n0 is the density of conduction electrons, Nc is the effective density of states in the conduction band, and u is the activation energy from the trapping levels to the conduction band. The relaxation time rm... | |
| James R. Janesick - 2001 - 936 頁
...constant, which describes the rate at which electrons are emitted from the traps. This constant is i where NC is the effective density of states in the conduction band (2.8 x 1019 states/cm3) and Ej is the trap energy level below the conduction band edge (eV). Here v,h... | |
| Wim Magnus, Wim Schoenmaker - 2002 - 300 頁
...approximation: n«,(r) = Nc-2=Fi/2 (0(eV(r,z) + EF - Ec)) (13.41) where the Fermi integral is \ftdt r = Jo Here Nc is the effective density of states in the conduction band and EF is the Fermi level of the system in the state of equilibrium. 13.6 Numerical Results During the... | |
| Yoon-Soo Park, Michael Shur, William Tang - 2002 - 442 頁
...is given by (10) where A is the anode area. The saturation current, denoted by Isa, is given by (11) where Nc is the effective density of states in the conduction band and me is the effective mass of the material, 7 is the temperature, k is the Boltzmann constant, and <!>B... | |
| M Razeghi, Mohamed Henini - 2004 - 602 頁
...temperature and k is Boltzmann's constant. This can also be written in the form 2eVKNd I"2") _ _/ -efa \ kT ) where Nc is the effective density of states in the conduction band, /AVERT 's tne electron mobility in the perpendicular direction, e is the electron charge, Vbi is the... | |
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