Quantum Transport in Submicron Devices: A Theoretical IntroductionSpringer Science & Business Media, 2002年6月12日 - 270 頁 In this book, the problem of electron and hole transport is approached from the point of view that a coherent and consistent physical theory can be constructed for transport phenomena. Along the road readers will visit some exciting citadels in theoretical physics as the authors guide them through the strong and weak aspects of the various theoretical constructions. Our goal is to make clear the mutual coherence and to put each theoretical model in an appropriate perspective. The mere fact that so many partial solutions have been proposed to describe transport, be it in condensed matter, fluids, or gases, illustrates that we are entering a world of physics with a rich variety of phenomena. Theoretical physics always seeks to provide a unifying picture. By presenting this tour of many very inventive attempts to build such a picture, it is hoped that the reader will be inspired and encouraged to help find the unifying principle behind the many faces of transport. |
內容
I | 3 |
II | 7 |
III | 8 |
IV | 10 |
V | 11 |
VII | 12 |
VIII | 14 |
IX | 15 |
LXXV | 120 |
LXXVI | 126 |
LXXVII | 127 |
LXXVIII | 130 |
LXXIX | 131 |
LXXX | 137 |
LXXXII | 138 |
LXXXIII | 139 |
X | 16 |
XI | 18 |
XII | 21 |
XIII | 23 |
XIV | 27 |
XVII | 28 |
XIX | 29 |
XX | 30 |
XXI | 31 |
XXII | 32 |
XXIII | 33 |
XXIV | 35 |
XXV | 36 |
XXVIII | 37 |
XXIX | 38 |
XXX | 39 |
XXXI | 40 |
XXXV | 43 |
XXXVII | 44 |
XL | 46 |
XLI | 51 |
XLII | 53 |
XLIV | 54 |
XLV | 58 |
XLVI | 62 |
XLVII | 71 |
XLVIII | 73 |
XLIX | 77 |
L | 79 |
LII | 83 |
LIV | 84 |
LV | 85 |
LVI | 88 |
LVII | 90 |
LVIII | 94 |
LIX | 96 |
LXIII | 98 |
LXV | 99 |
LXVI | 101 |
LXVII | 104 |
LXVIII | 106 |
LXIX | 107 |
LXX | 111 |
LXXI | 114 |
LXXII | 115 |
LXXIII | 117 |
LXXIV | 119 |
LXXXV | 140 |
LXXXVI | 141 |
LXXXVII | 145 |
LXXXVIII | 146 |
LXXXIX | 147 |
XCI | 150 |
XCII | 154 |
XCIII | 157 |
XCV | 162 |
XCVI | 169 |
XCVII | 170 |
XCVIII | 177 |
XCIX | 184 |
C | 189 |
CI | 190 |
CII | 191 |
CIII | 193 |
CIV | 198 |
CV | 200 |
CVI | 202 |
CVII | 207 |
CVIII | 209 |
CIX | 210 |
CX | 213 |
CXI | 215 |
CXII | 216 |
CXIII | 218 |
CXIV | 219 |
CXV | 221 |
CXVI | 225 |
CXVII | 226 |
CXVIII | 229 |
CXIX | 235 |
CXX | 240 |
CXXI | 241 |
CXXII | 242 |
CXXIII | 243 |
CXXV | 245 |
CXXVI | 248 |
CXXVII | 251 |
CXXIX | 253 |
CXXX | 255 |
CXXXII | 258 |
CXXXIII | 259 |
CXXXIV | 261 |
265 | |
常見字詞
approximation balance equation barriers Boltzmann bosons boundary conditions calculations Calko channel charge density circuit coefficients commutation consider constant constraint coordinates corresponding current density defined denotes density matrix density operator dependent derive described device distribution function effective mass eigenstates eigenvalues electric field electron gas electron-phonon energy eigenvalues ensemble entropy equations of motion equilibrium evaluation expectation value fermions field operators flux Fock space formalism gate stack Hamiltonian Heisenberg integral interaction inversion layer k₁ magnetic many-particle mesoscopic microscopic momentum MOSFET non-conservative non-equilibrium number of particles obtain one-particle perturbation phase space Phys physical position potential energy quantum mechanics quantum transport quantum wire region representation resonant result scattering Schrödinger equation second quantization semiconductor single-particle solution source and drain spectrum spin statistical subband term theory tion tunneling variables vector voltage wave functions მი