 A" is the Richardson's constant for (Ga. Mn)N, T is the absolute measurement temperature and k is Boltzmann's constant. This can also be written in the form COVERT -il/2 where NC is the effective density of states in the conduction band...  Physics of Semiconductor Devices - 第 17 頁Simon M. Sze, Kwok K. Ng 著 - 2006 - 832 頁有限的預覽 - 關於此書
 | M Razeghi, Mohamed Henini - 2004 - 602 頁
...measurement temperature and k is Boltzmann's constant. This can also be written in the form rHHM /s = where Nc is the effective density of states in the conduction band, /AVERT is tne electron mobility in the perpendicular direction, e is the electron charge, Vhj is the... | |
 | Karlheinz Seeger - 2004 - 558 頁
...13) for nondegeneracy, the concentration of free electrons is given by n = 7Vcexp[(C-ec)ABT], (3.2.3) where Nc is the effective density of states in the conduction band. Introducing the donor ionization energy ACD by AeD = ec " ED , (3.2.4) we obtain from (3.2.2) the law... | |
 | Kwan Chi Kao - 2004 - 602 頁
...Equation 6-40 for n(x), O'Dwyer29 has derived the following relation for / as a function of F: (6-41) where Nc is the effective density of states in the conduction band, which is given by Ne = 2 h2 (6-42) The ratio of Equation 6-41 to Equation 6-34 gives the ratio of the... | |
 | Dieter K. Schroder - 2006 - 800 頁
...barrier height by the relationship <j>B = Vhi + Vo (3.51) as seen in Fig. 3.36. Vo = (kT /q)ln(Nc/ND), where Nc is the effective density of states in the conduction band. Plotting 1/(C/A)2 versus V gives a curve with the slope 2/[qKsso(NA-ND)], and with the intercept on... | |
 | John V. Chang - 2007 - 234 頁
...measurement temperature and k is Boltzmann's constant. This can also be written in the form COVERT -il/2 where NC is the effective density of states in the conduction band, INVERT is the electron mobility in the perpendicular direction, e is the electron charge, V(,, is the... | |
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